Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs
暂无分享,去创建一个
Mathieu Leroux | Benjamin Damilano | Jean Massies | Julien Brault | Aimeric Courville | Abdelkarim Kahouli | Maxim Korytov | Philippe Vennéguès | Gaetano Randazzo | Sébastien Chenot | Borge Vinter | Philippe De Mierry | Daniel Rosales | Thierry Bretagnon | Bernard Gil | J. Brault | J. Massies | S. Chenot | B. Damilano | T. Bretagnon | B. Gil | P. Vennégués | P. de Mierry | M. Leroux | B. Vinter | M. Korytov | A. Kahouli | D. Rosales | A. Courville | G. Randazzo
[1] Motoaki Iwaya,et al. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes , 2010 .
[2] J. Brault,et al. Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides , 2006 .
[3] S. Chenot,et al. Comparison between Polar (0001) and Semipolar (11\bar22) Nitride Blue–Green Light-Emitting Diodes Grown onc- andm-Plane Sapphire Substrates , 2009 .
[4] Alexey Kavokin,et al. Excitons in nitride heterostructures: From zero- to one-dimensional behavior , 2013 .
[5] J. Brault,et al. AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission , 2013 .
[6] J. Brault,et al. Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots , 2008 .
[7] J. Massies,et al. Group-III nitride quantum heterostructures grown by molecular beam epitaxy , 2001 .
[8] B. Gil,et al. The calculation of semipolar orientations for wurtzitic semiconductor heterostructures: application to nitrides and oxides , 2012 .
[9] J. Massies,et al. Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation , 2003 .
[10] Yasuhiko Arakawa,et al. UV photoluminescence from size-controlled GaN quantum dots grown by MOCVD , 2002 .
[11] Jean-Michel Gérard,et al. InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si , 1996 .
[12] B. Gayral,et al. Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy , 2005 .
[13] J. Brault,et al. Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters , 2014 .
[14] V. Adivarahan,et al. Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region , 2009 .
[15] J. Brault,et al. Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates , 2003 .
[16] Motoaki Iwaya,et al. Novel UV devices on high-quality AlGaN using grooved underlying layer , 2009 .
[17] Nicolas Grandjean,et al. From visible to white light emission by GaN quantum dots on Si(111) substrate , 1999 .
[18] J. Brault,et al. Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties , 2011 .
[19] J. Massies,et al. Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots , 2006 .
[20] Guy Feuillet,et al. Growth kinetics and optical properties of self-organized GaN quantum dots , 1998 .
[21] Xiaolong Du,et al. InGaN/GaN multi-quantum dot light-emitting diodes , 2004 .
[22] James S. Speck,et al. Dislocation mediated surface morphology of GaN , 1999 .
[23] J. Brault,et al. Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy , 2009 .
[24] Yoshinobu Aoyagi,et al. Self‐assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant , 1996 .
[25] J. Brault,et al. Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range , 2009 .
[26] J. Massies,et al. In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) , 2000 .
[27] S. Nakamura,et al. Strain-induced polarization in wurtzite III-nitride semipolar layers , 2006 .
[28] J. Brault,et al. Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes , 2013 .
[29] J. Brault,et al. GaN/Al0.5Ga0.5N (11-22) semipolar nanostructures: A way to get high luminescence efficiency in the near ultraviolet range , 2011 .
[30] D. V. Dinh,et al. Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy , 2012 .
[31] Y. Taniyasu,et al. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres , 2006, Nature.
[32] J. Brault,et al. Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots , 2010 .