Ionization-induced carrier transport in InAlAs/InGaAs high electron mobility transistors

Time resolved charge-collection measurements and two-dimensional device simulations performed on InAlAs/InGaAs high electron mobility transistors (HEMTs) for ion and pulsed laser excitation address the mechanisms of charge collection and enhancement in these heterostructure devices. The results are compared to those for bulk GaAs field-effect transistors. In the HEMTs, the ionization-induced enhancement current is associated with a significant lowering of the source/channel barrier, and is largely confined to the InGaAs well. The simulations suggest that the primary contributor to the barrier lowering is an excess hole density that develops in the InAlAs buffer layer.

[1]  Toshiaki Matsui,et al.  Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz , 2002 .

[2]  Y. Yamashita,et al.  Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz , 2002, IEEE Electron Device Letters.

[3]  T. Enoki,et al.  0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .

[4]  P. Chao,et al.  A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT , 1991 .

[5]  Suman Datta,et al.  Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors , 1998 .

[6]  S. Buchner,et al.  Charge-enhancement mechanisms of GaAs field-effect transistors: experiment and simulation , 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

[7]  M. Higashiwaki,et al.  Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency , 2001, IEEE Electron Device Letters.

[8]  A. Peczalski,et al.  Charge-collection mechanisms of heterostructure FETs , 1994 .

[9]  P. Ho,et al.  W-band high efficiency InP-based power HEMT with 600 GHz fmax , 1995 .

[10]  Eiichi Sano,et al.  InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond , 1999 .

[11]  A. B. Campbell,et al.  Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth , 1998 .

[12]  T. Otsuji,et al.  Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs , 1998 .

[13]  T. Enoki,et al.  An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs , 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.

[14]  J. B. Boos,et al.  Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs) , 2002 .

[15]  H. Toba,et al.  Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies , 2000, Journal of Lightwave Technology.

[16]  S. Buchner,et al.  Charge-collection efficiency of GaAs field effect transistors fabricated with a low-temperature grown buffer layer: dependence on charge deposition profile , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

[17]  A. B. Campbell,et al.  Single-event phenomena in GaAs devices and circuits , 1996 .

[18]  April Brown,et al.  50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors , 1992 .