Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2- mu m radiation-hardened CMOS p-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 kHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. The effects of different device terminal DC biases and channel geometries on the noise are described.<<ETX>>

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