On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures
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H. Morkoc | R. Fischer | D. Perrachione | T. Drummond | W. Kopp | R. Fischer | H. Morkoç | J. Klem | T. Henderson | T.J. Drummond | J. Klem | W. Kopp | T.S. Henderson | D. Perrachione
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