n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon (Si<sub>1-y</sub>C<sub>y</sub>) source and drain (S/D) regions formed by a Si recess etch and a selective epitaxy of Si<sub>1-y</sub>C<sub>y</sub> in the S/D regions. The carbon mole fraction incorporated is 0.013. Lattice mismatch of ~0.56% between Si <sub>0.987</sub>C<sub>0.013</sub> and Si results in lateral tensile strain and vertical compressive strain in the Si channel region, both contributing to substantial electron-mobility enhancement. The conduction-band offset DeltaE<sub>c</sub> between the Si<sub>0.987 </sub>C<sub>0.013</sub> source and the strained Si channel could also contribute to an increased electron injection velocity nu<sub>inj</sub> from the source. Implementation of the Si<sub>0.987 </sub>C<sub>0.013</sub> S/D regions for n-MOSFET provides significant drive current I<sub>Dsat</sub> enhancement of up to 50% at a gate length of 50 nm

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