Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2).
暂无分享,去创建一个
B. Douhard | C. Rettner | T. Topuria | P. Rice | F. Peeters | S. Datta | S. Parkin | M. Samant | N. Shukla | W. Vandervorst | K. Martens | D. N. Esfahani | N. Aetukuri | Nagaphani B. Aetukuri | A. Volodin | E. Freeman | Jaewoo Jeong | J. Jeong | F. M. Peeters | Wilfried Vandervorst | Suman Datta | Koen Martens | Nikhil Shukla | Eugene Freeman | Alexander Volodin
[1] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.