An improved physical model of the 2.7 eV electroluminescence from thin SiO2 films

A physical model of the 2.7 eV electroluminescence from thin silicon dioxide films up to dielectric breakdown has been developed. Two possibilities for the electroluminescence quantum to be emitted with and without recombination have been discussed. Numerical simulations using this model have been carried out. A fairly good agreement with experimental results is obtained.

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