论文信息 - Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge Sharing

Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell (DICE latch) shows significant directional sensitivity results impacting observed cross-section and LET thresholds. 3-D TCAD simulations show this directional effect is due to charge sharing and parasitic bipolar effects due to n-well potential collapse.

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