Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study

In this study, a 60 nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1–20 GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.

[1]  Mridula Gupta,et al.  Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation , 2010 .

[2]  Paul K. L. Yu,et al.  InGaAs/InP waveguide photodetector with high saturation intensity , 1992 .

[3]  Po-Chun Chang,et al.  High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications , 2017, IEEE Electron Device Letters.

[4]  Tiaoyang Li,et al.  Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering , 2019, IEEE Transactions on Electron Devices.

[5]  Shubhankar Majumdar,et al.  Implementation of veriloga GaN HEMT model to design RF switch , 2015 .

[6]  Trupti Ranjan Lenka,et al.  Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands , 2018, IET Circuits Devices Syst..

[7]  I. Srinivasa Rao,et al.  Highly linear dual capacitive feedback LNA for L-band atmospheric radars , 2016 .

[8]  Antonio Raffo,et al.  GaN HEMT Noise Model Based on Electromagnetic Simulations , 2015, IEEE Transactions on Microwave Theory and Techniques.

[9]  Chandan Kumar Sarkar,et al.  Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III–V heterostructure underlap DG MOSFET , 2012 .

[10]  Xiaohua Ma,et al.  High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency , 2011, IEEE Electron Device Letters.

[11]  Matthias Seelmann-Eggebert,et al.  A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs , 2012, International Journal of Microwave and Wireless Technologies.

[12]  Hyun-Seok Kim,et al.  Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance. , 2014, Journal of nanoscience and nanotechnology.

[13]  Zheng Xinnian,et al.  A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor , 2015 .

[14]  A. Cappy,et al.  Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs , 2007, IEEE Transactions on Electron Devices.

[15]  G. Kompa,et al.  Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion , 2007, IEEE Transactions on Electron Devices.

[16]  C. Gaquiere,et al.  Characteristics of Al/sub 2/O/sub 3//AllnN /GaN MOSHEMT , 2007 .

[17]  M. Pospieszalski.  Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[18]  I. Watanabe,et al.  547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance , 2004, IEEE Electron Device Letters.

[19]  Kei May Lau,et al.  Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD , 2014 .

[20]  Y. Yamashita,et al.  Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz , 2002, IEEE Electron Device Letters.

[21]  Hansruedi Benedickter,et al.  Millimeter-wave GaN-based HEMT development at ETH-Zürich , 2010, International Journal of Microwave and Wireless Technologies.

[22]  Hansruedi Benedickter,et al.  High-speed and low-noise AlInN/GaN HEMTs on SiC , 2011 .

[23]  Ansel Barchowsky,et al.  An Analytical Model for Predicting Turn-ON Overshoot in Normally-OFF GaN HEMTs , 2020, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[24]  Syed K. Islam,et al.  Modeling of Enhancement-Mode GaN-GIT for High-Power and High-Temperature Application , 2020, IEEE Transactions on Electron Devices.

[25]  A. Cappy,et al.  Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls , 2005, IEEE Electron Device Letters.

[26]  Feri Adriyanto,et al.  AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate , 2013 .

[27]  C. Gaquiere,et al.  InAlN/GaN MOS-HEMT with thermally grown oxide , 2008 .

[28]  A. Cappy,et al.  InAlAs-InGaAs double-gate HEMTs on transferred substrate , 2004, IEEE Electron Device Letters.

[29]  Hafizur Rahaman,et al.  Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs , 2016 .