The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K
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W. Windbracke | H. G. Wagemann | H. Bernt | H.-J. Wildau | H. Bernt | D. Friedrich | W. Seifert | P. Staudt-Fischbach | H. Wagemann | W. Windbracke | P. Staudt-Fischbach | D. Friedrich | H.-J. Wildau | W. Seifert
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