Coarsening kinetics of heteroepitaxial islands in nucleationless Stranski-Krastanov growth

A large-scale three-dimensional computer investigation of coarsening kinetics of heteroepitaxial islands during nucleationless Stranski-Krastanov growth is conducted. Both surface diffusion and condensation are considered. It is found that island formation and coarsening kinetics are strongly influenced by the growth rate and growth mode. Under the nucleationless growth mode, unusual coarsening kinetics, i.e., the superlinear increase in the mean island volume with respect to time, and the higher-than-linear-rate decrease in the areal density of islands with respect to time described by Floro et al. [Phys. Rev. Lett. 84, 701 (2000)], is observed. It is proposed that unusual coarsening kinetics is attributed to the island volume distribution at the beginning of coarsening. The standard mean-field theory considering the island volume distribution at the beginning of coarsening reproduces the observed behavior.

[1]  Bernhard Specht,et al.  Modified shape functions for the three‐node plate bending element passing the patch test , 1988 .

[2]  J. Tersoff,et al.  Coarsening of Self-Assembled Ge Quantum Dots on Si(001) , 1998 .

[3]  Davidson,et al.  Growth mechanism and clustering phenomena: The Ge-on-Si system. , 1989, Physical review. B, Condensed matter.

[4]  N. Yokoyama,et al.  ISLAND SIZE SCALING IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS , 1998 .

[5]  W. Tiller,et al.  Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion , 1972 .

[6]  M. Sosnowski,et al.  Preparation and Characterization of Thin Films of Alumina by Metalorganic Chemical Vapor Deposition. , 1988 .

[7]  I. Lifshitz,et al.  The kinetics of precipitation from supersaturated solid solutions , 1961 .

[8]  Ross,et al.  Instability-driven SiGe island growth , 2000, Physical review letters.

[9]  Palmer,et al.  Influence of island mobility on island size distributions in surface growth. , 1996, Physical review. B, Condensed matter.

[10]  N. Pinto,et al.  Cluster-size distribution of SiGe alloys grown by MBE , 1998 .

[11]  N. Ledentsov,et al.  Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots , 1998 .

[12]  K. Szot,et al.  Size distribution of Ge islands grown on Si(001) , 1997 .

[13]  Yong-Wei Zhang,et al.  Numerical simulations of island formation in a coherent strained epitaxial thin film system , 1999 .

[14]  C. Ratsch,et al.  Saturation and scaling of epitaxial island densities. , 1994, Physical review letters.

[15]  C. Stoldt,et al.  Formation and Equilibration of Submonolayer Island Distributions in Ag/Ag(100) Homoepitaxy , 1998 .

[16]  J. Venables,et al.  Microstructural evolution during the heteroepitaxy of Ge on vicinal Si(100) , 1991 .

[17]  B. Chakraverty Grain size distribution in thin films—1. Conservative systems , 1967 .

[18]  Sinclair,et al.  Novel SiGe island coarsening kinetics: ostwald ripening and elastic interactions , 2000, Physical review letters.

[19]  Yuchuan Zhang Formation of epitaxially strained islands by controlled annealing , 1999 .

[20]  Critical cluster size: Island morphology and size distribution in submonolayer epitaxial growth. , 1995 .

[21]  Sutter,et al.  Nucleationless three-dimensional island formation in low-misfit heteroepitaxy , 2000, Physical review letters.

[22]  I. Goldfarb,et al.  Competing growth mechanisms of Ge/Si(001) coherent clusters , 1997 .

[23]  Meakin,et al.  Scaling of the droplet-size distribution in vapor-deposited thin films. , 1988, Physical review letters.