Application study of the benefits for using silicon-carbide versus silicon in power modules

On a device-level, the benefits of Silicon-Carbide (SiC) versus Silicon (Si) power components have been documented over the past several years [1-5]. The fabrication process for SiC components continues to mature and SiC products are now commercially available. The development of high-current MOSFETs and their use in all-SiC power modules have been reported [6-9]. Recently, the experimental characterization and performance of a 1200-V, 800-A all-SiC dual module has been documented [10,11]. This paper outlines the development of a simulation model for the 800-A all-SiC dual module from this experimental characterization data. Using this model, a comparison study is presented for using an all-SiC module versus an Si IGBT module in DC-DC and DC-AC power circuit applications at a 900-A, 600-A, and 300-A module level. Upgrading the power module from Si to SiC devices resulted in lower loss in nearly every simulated scenario.

[1]  Tsunenobu Kimoto,et al.  SiC technologies for future energy electronics , 2010, 2010 Symposium on VLSI Technology.

[2]  J. Yamada,et al.  New MEGA POWER DUAL/spl trade/ IGBT module with advanced 1200 V CSTBT chip , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[3]  T. E. Salem,et al.  High-Temperature High-Power Operation of a 100 A SiC DMOSFET Module , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.

[4]  Ronald Green,et al.  Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module , 2010, 2010 IEEE Energy Conversion Congress and Exposition.

[5]  A. Agarwal,et al.  10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation , 2011, 2011 IEEE Electric Ship Technologies Symposium.

[6]  R. Komaragiri,et al.  Simulation and comparison studies of Silicon Carbide and silicon power devices , 2011, India International Conference on Power Electronics 2010 (IICPE2010).

[7]  Michael Frisch,et al.  Power module with additional low inductive current path , 2010, 2010 6th International Conference on Integrated Power Electronics Systems.

[8]  Eric R. Motto,et al.  New MEGA POWER DUAL™ IGBT Module with Advanced 1200V CSTBT Chip , 2002 .

[9]  P. Friedrichs,et al.  Silicon carbide power semiconductors — new opportunities for high efficiency , 2008, 2008 3rd IEEE Conference on Industrial Electronics and Applications.

[10]  R. A. Wood,et al.  Evaluation of a 1200-V, 800-A All-SiC Dual Module , 2011, IEEE Transactions on Power Electronics.

[11]  Andrzej M. Trzynadlowski,et al.  Control of Induction Motors , 2000 .

[12]  T. Chow,et al.  Silicon carbide benefits and advantages for power electronics circuits and systems , 2002, Proc. IEEE.

[13]  L. Stevanovic,et al.  Low inductance power module with blade connector , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[14]  S. Krishnaswami,et al.  An overview of Cree silicon carbide power devices , 2004, Power Electronics in Transportation (IEEE Cat. No.04TH8756).

[15]  R. A. Wood,et al.  Reverse conduction of a 100 A SiC DMOSFET module in high-power applications , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).