论文信息 - Si-based optical receivers

Si-based optical receivers

Two Ge on Si photodetectors are reported: MSM photodiodes with an amorphous Ge layer to increase the Schottky barrier height and Ge/GexSi1-x/Si heterojunction photodiodes. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs has also been successfully demonstrated.

Joe C. Campbell | Jungwoo Oh | Zhihong Huang

[1] Kang L. Wang,et al. A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface , 1999 .

[2] Joe C. Campbell,et al. Design and implementation of high-speed planar Si photodiodes fabricated on SOI substrates , 1999 .

[3] Dan Buca,et al. Metal–germanium–metal ultrafast infrared detectors , 2002 .

[4] Andrew G. Glen,et al. APPL , 2001 .

[5] Joe C. Campbell,et al. Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers , 2002 .

[6] B. Orner,et al. Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy , 1995 .

[7] Joe C. Campbell,et al. High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology , 2002 .