Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation

Data are presented showing that a p–n InP–In0.5Ga0.5P–In0.5(Al0.3Ga0.2)P–In0.5Al0.5P quantum-dot (QD) heterostructure diode, with an auxiliary ∼20 A InGaP quantum well (QW) coupled via an In(AlGa)P barrier (∼20 A) to the single layer of QDs to aid carrier collection, has a steeper current–voltage characteristic than the case of a similar diode with no auxiliary QW. The p–n InP+InGaP QD+QW diode is capable of 300 K visible-spectrum QD laser operation, while the single-layer InP QD diode (single QD layer) saturates at low current (≲1 mA) and does not exhibit stimulated emission.

[1]  Russell D. Dupuis,et al.  Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures , 2001 .

[2]  R. Dupuis,et al.  III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[3]  T. Riedl,et al.  Growth of self-assembled InP quantum islands for red-light-emitting injection lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  J. Merz,et al.  Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates , 2001 .

[5]  Nikolai N. Ledentsov,et al.  Quantum dot heterostructures , 1999 .

[6]  M. Lampert.  Double injection in insulators , 1961, IRE Transactions on Electron Devices.

[7]  N. Holonyak,et al.  Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition , 2001 .

[8]  N. Holonyak.  Double Injection Diodes and Related DI Phenomena in Semiconductors , 1962, Proceedings of the IRE.

[9]  D. Bimberg,et al.  Quantum-dot heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[10]  Th. Hangleiter.  Red Light Emitting Injection Lasers with Vertically-Aligned InP/GaInP Quantum Dots , 1999 .

[11]  R. Dupuis,et al.  High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition , 2001 .

[12]  Jonathan J. Wierer,et al.  Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes , 1996 .

[13]  Karl Eberl,et al.  Optical gain and lasing in self‐assembled InP/GaInP quantum dots , 1996 .