Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique

This paper presents the new 1200V FZ-Diode chip using the newly developed local lifetime control technique which is a combination of the electron irradiation and the back-side laser annealing in order to realize the optimum carrier profile. Furthermore, 20% lower resistivity bulk can be utilized due to optimization of the edge termination structure to have a uniform electric field distribution. As a result, the new 1200V FZ-diode with very soft recovery characteristics has been successfully developed without increase of the reverse recovery losses compared to a conventional diode.

[1]  Ichiro Omura,et al.  A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor , 1993, Proceedings of IEEE International Electron Devices Meeting.

[2]  M. Rahimo,et al.  The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[3]  G. Deboy,et al.  Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode) , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[4]  T. Laska,et al.  The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[5]  M. Nemoto,et al.  MBBL diode: a novel soft recovery diode , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[6]  F. Hille,et al.  1200V Emcon4 freewheeling diode - a soft alternative , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[7]  Y. Onozawa.  Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.