Improved modeling of isolated EDMOS in advanced CMOS technologies

Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model accounts for the various parasitic bipolar components (PBCs) that are fully characterized. This model can cover various architectures, from bulk-Si to FDSOI.

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