Analysis of edge effects in the mesa isolated nMOS SOI

Uses both I-V measurements and charge pumping methods to investigate the sidewall edge effects in mesa isolation. There are two major issues that have to be solved related to edge effects in the mesa. One is the 'hump' in I-V characteristics which can be solved by a tilt field implant. The other issue is the extra interface states along the sidewall which does not scale linearly with channel length. Therefore, in deep submicron devices, the extra interface states can become the same order of magnitude as the interface states from the channel. As a result of the noise from the extra interface states, application of mesa isolation to SOI CMOS on analog circuits needs further optimization.