In Situ Synthesis of Porous Silicon Carbide (SiC) Ceramics Decorated with SiC Nanowires

We fabricated highly aligned porous silicon carbide (SiC) ceramics decorated with SiC nanowires by the unidirectional freeze casting of SiC/camphene slurries with various polycarbosilane (PCS) contents, ranging from 0 to 20 wt% in relation to the SiC powders, in which the PCS preceramic was used as a binder and source for the in situ growth of the SiC nanowires. In this method, aligned pore channels were formed as a replica of the unidirectionally grown camphene dendrites, while SiC nanowires were formed within the pores in situ via a vapor–liquid–solid (VLS) mechanism during the heat treatment of the porous green bodies at 1400°C for 1 h in a flowing Ar atmosphere. The pore channels were well decorated with single-crystalline SiC nanowires. It was also observed that the growth of the SiC nanowires was strongly affected by the initial PCS content and heat-treatment temperature.

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