Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

In this paper we present full-band Monte Carlo simulations of an advanced Silicon/Silicon-Germanium Heterojunction Bipolar Transistor. In addition to this 2D MC simulations we performed simulations with a 1D MC model and a hydrodynamic model. For main internal distributions good consistency is found. We conclude with a microscopic investigation of the full-band Monte Carlo results.

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