论文信息 - A technology for GaAs-based optoelectronic integrated circuits

A technology for GaAs-based optoelectronic integrated circuits

The use of a single growth epitaxial structure was investigated for planar integration of GaAs-based laser diodes and photodetectors. Cleaved mirror lasers, non-guided wave and guided wave photodetectors were fabricated and measured, for structure optimization. A BCl/sub 3/ RIE process was developed and lasers with RIE etched mirrors were fabricated exhibiting a threshold current density less than 1 kA/cm/sup 2/.

[1] U. Gösele,et al. Low temperature wafer direct bonding , 1994 .

[2] O. King,et al. GaAs/AlGaAs ridge lasers with etched mirrors formed by an inductively coupled plasma reactor , 1997 .

[3] John E. Johnson,et al. GaAs/AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching , 1990 .

[4] Ashok V. Krishnamoorthy,et al. Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmap , 1996 .

[5] A. Forchel,et al. Edge-emitting GaInAs-AlGaAs microlasers , 1999, IEEE Photonics Technology Letters.