论文信息 - A Study of Boron Clustering Transients and Mechanisms in Doped Silicon - 字舞流文

A Study of Boron Clustering Transients and Mechanisms in Doped Silicon

M. Law | A. Lilak | K. Jones | V. Krishnamoorthy | D. Vieira

[1] M. Law,et al. EVOLUTION OF 311 TYPE DEFECTS IN BORON-DOPED STRUCTURES : EXPERIMENTAL EVIDENCE OF BORON-INTERSTITIAL CLUSTER FORMATION , 1999 .

[2] P. A. Stolk,et al. Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon , 1996 .