Low power ARM® Cortex™-M0 CPU and SRAM using Deeply Depleted Channel (DDC) transistors with Vdd scaling and body bias
暂无分享,去创建一个
Lawrence T. Clark | R. Roy | Robert Rogenmoser | T. Yamada | D. Zhao | Vineet Agrawal | N. Kepler | David Kidd | Gokul Krishnan | Samuel Leshner | T. Bakishev | P. Ranade | M. Wojko | M. Hori | T. Ema | S. Moriwaki | T. Tsuruta | J. Mitani | S. Wakayama
[1] John V. Faricelli,et al. Layout-dependent proximity effects in deep nanoscale CMOS , 2010, IEEE Custom Integrated Circuits Conference 2010.
[2] T. Schulz,et al. An Effective Switching Current Methodology to Predict the Performance of Complex Digital Circuits , 2007, 2007 IEEE International Electron Devices Meeting.
[3] Vivek De,et al. Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
[4] Trevor N. Mudge,et al. Power: A First-Class Architectural Design Constraint , 2001, Computer.
[5] David Flynn. High performance State Retention with Power Gating applied to CPU subsystems - design approaches and silicon evaluation , 2012, 2012 IEEE Hot Chips 24 Symposium (HCS).
[6] K. Fujita,et al. Advanced channel engineering achieving aggressive reduction of VT variation for ultra-low-power applications , 2011, 2011 International Electron Devices Meeting.
[7] L. T. Clark,et al. A highly integrated 65-nm SoC process with enhanced power/performance of digital and analog circuits , 2012, 2012 International Electron Devices Meeting.