论文信息 - Nd:YAG laser pumped HgGa2S4 parametric oscillator

Nd:YAG laser pumped HgGa2S4 parametric oscillator

By pumping the 8mm long HgGa2S4 crystal cut at θ = 67.5° and φ = 0° with the Nd:YAG laser in the double-pass SRO (singly resonant oscillator) scheme, we have generated 410mW output power (80mW at 4.180μm and 330mW at 1.428μm) at 30Hz. The pump to output conversion efficiency was 17%. In addition, by heating the HgGa2S4 crystal from 20° to 120° at normal pump incidence (θpm = 67.5°), we have generated the tunable outputs in the 1.413～1.428μm and 4.180～4.311μm range.

Kiyoshi Kato | Kentaro Miyata

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