Hydrogen-implant-induced polarization loss and recovery in IrO2∕Pb(Zr,Ti)O3∕Pt capacitors

Hydrogen was implanted into IrO2 (200nm)∕Pb(Zr,Ti)O3∕Pt thin film capacitors at 26keV with a flux of 2×1015H+ions∕cm2 and also implanted at 20keV with a flux of 1×1015H+ions∕cm2 into IrO2 (50nm)∕Pb(Zr,Ti)O3∕Pt. The implanted samples showed a net loss in polarization of 20μC∕cm2 as a result of the hydrogen implant and the hysteresis loop was severely distorted. Transmission electron microscopy cross-sectional images and microdiffraction patterns showed no physical damage in the Pb(Zr,Ti)O3 after implanting. Secondary ion mass spectroscopy (SIMS) analysis revealed that a maximum concentration of H of 4×1020atom∕cm3 after implantation. Permittivity measurements also showed a decrease after implantation of 20% or more. After annealing the implanted samples in air at 350°C for 5min the remanent polarization loop and dielectric properties were restored. SRIM-2003 software simulation of the implanted hydrogen revealed that 1% oxygen vacancies are created by implanting using these implant conditions. In addition,...