A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

[1]  X. Hou,et al.  PASSIVATION OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR TRANSISTORS BY S2CL2 SOLUTION , 1997 .

[2]  M. Lebedev,et al.  Solvent effect on the properties of sulfur passivated GaAs , 1996 .

[3]  H. Hwang,et al.  AES and SRUPS studies on surface passivation of GaAs by (NH4)2Sx sulfurization techniques , 1996 .

[4]  Z. Lu,et al.  Surface topography and composition of InP(100) after various sulfur passivation treatments , 1995 .

[5]  Kihwan Choi,et al.  Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P3N5 Gate Insulators , 1995 .

[6]  Hughes,et al.  Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs(100) surface. , 1994, Physical review. B, Condensed matter.

[7]  N. Sanada,et al.  (NH4)2Sx‐treated InP(001) studied by high‐resolution x‐ray photoelectron spectroscopy , 1994 .

[8]  X. Hou,et al.  S2Cl2 treatment: A new sulfur passivation method of GaAs surface , 1994 .

[9]  W. H. Weinberg,et al.  Structural model of sulfur on GaAs(100) , 1994 .

[10]  M. Oshima,et al.  Surface chemical bonding of (NH4)2Sx‐treated InP(001) , 1993 .

[11]  W. Lau,et al.  X‐ray photoelectron spectroscopy study on InP treated by sulfur containing compounds , 1992 .

[12]  Ohno Takahisa Passivation of GaAs(001) surfaces by chalcogen atoms (S, Se and Te) , 1991 .

[13]  Kahn,et al.  High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfaces. , 1991, Physical review. B, Condensed matter.

[14]  Masaharu Oshima,et al.  Bonding states of chemisorbed sulfur atoms on GaAs , 1991 .