Preparation and physical properties of germanium thin films

Prepared by electron beam evaporation with argon plasma assistance, ultrathin Ge films on JGS1, CaF2 and Si substrates at different deposition temperatures has been investigated by grazing incidence X-ray reflectivity (GIXRR), spectrophotometer, atomic force microscopy. By investigation of the influence of deposition temperature ranging from 100 to 300degC and annealing treatment on transmittance, morphologies of Ge thin films. It can be seen that both deposition temperature exchange and annealing treatment can significantly affect the thickness of Ge thin films. And there is an enhancement of attenuation on films transmittance with the increasing of deposition temperature on JGS1 and CaF2 substrates, while it’s not significant on Si substrate. In addition, it can be seen that the roughness of Ge films on JGS1 and CaF2 substrates has similar variation, which is different from the roughness of Ge films on Si substrate.

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