论文信息 - Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages - 字舞流文

Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages

S. Franchi | M. Capizzi | A. Polimeni | A. Patané | F. Martelli | F. Intonti | M. Geddo | M. Alessi | A. Bosacchi

[1] A. Madhukar,et al. Mass transfer in Stranski–Krastanow growth of InAs on GaAs , 1997 .

[2] Martelli,et al. Self-aggregation of quantum dots for very thin InAs layers grown on GaAs. , 1996, Physical review. B, Condensed matter.

[3] Nikolai N. Ledentsov,et al. Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots , 1996 .

[4] Bassani,et al. Exciton properties and optical response in InxGa1-xAs/GaAs strained quantum wells. , 1994, Physical review. B, Condensed matter.

[5] Leonard,et al. Critical layer thickness for self-assembled InAs islands on GaAs. , 1994, Physical review. B, Condensed matter.

[6] G. Bastard,et al. Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases. , 1990, Physical review. B, Condensed matter.

[7] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .