Nanoprobing plays a crucial roleforfailureFocussed IonBeam(FIB) specimen stage. Theseelectrical analysis (FA)inthenanometer-region generation nodesby analyses areusually carried outatthecontact (CA)level, havingthecapability todetect thefailure sites and wherethetransistors ofafaulty cell areisolated andthe characterize theelectrical behaviour ofmalfunctional devicesdefective sites canbeidentified fromthemeasured electrical forbetter understanding ofthefailure mechanisms. Italso characteristics (5,6). offers aguide tothenecessary physical analysis inidentifying Inthis paper, nanoprobing wasusedasthemaindiagnostic thecause offailure. Thisestablished electrical failure analysis toolprior totheimplementation ofsuitable deprocessing (EFA)methodology atalocalized area helps toaccelerate the steps carried outatthedetected failing site. Thiselectrical FA.Itsapplication tofewofthefront-end issues is characterization ofthefailing transistors therefore helps to highlighted inthepaper. expedite theprocess ofFA.PVC isbeing utilized asthe complementary methodinstead. We apply theaboveFA