Single-mode lasing from ZnO-SiO2 thin film nanoresonators obtained by magnetron sputtering method

Investigations of the spontaneous and stimulated emission spectra by optical pumping of ZnO layers deposited on SiO2-Si and opal were carried out. The stimulated emission pumped under ultra violet 337 nm N2 laser excitation was observed at 397 nm at room temperature from ZnO-SiO2-Si type and ZnO-opal type thin film structures. The threshold pumped power for the electron-hole plasma recombination laser process is of the order of 35 MW/cm2 for ZnO-SiO2-Si and 300 KW/cm2 for ZnO-opal structures.

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