Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis

A statistical compact RTN (Random Telegraph Noise) model with a fixed V<inf>th</inf> shift and V<inf>gs</inf> dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V<inf>th</inf> fluctuation at higher |V<inf>gs</inf>|. The model is also applied to analysis of SRAM V<inf>min</inf> fluctuation and finds out the distribution follows a log-normal statistics.

[1]  A.L. Lacaita,et al.  Statistical Model for Random Telegraph Noise in Flash Memories , 2008, IEEE Transactions on Electron Devices.