Invited paper A tentative assessment of semiconductor laser optical bistability

A review is given of reported results for optical bistability in semiconductors, with especial reference to that occurring in laser structures. Estimates are made of likely improvements that may occur in power-speed trade-offs for these devices. It is concluded that laser amplifier bistability offers comparable or, in some cases, better total energy budgets than for other forms and has the useful attribute of optical gain. However, extreme wavelength sensitivity and difficulty in forming large two-dimensional arrays using today's technology mitigate against use of the amplifier for large-scale optical logic. These two factors may be avoided by the use of self-electro-optic effect devices (SEEDs), which are less wavelength-sensitive, and by multiple-quantum-well dispersive etalons in the case of requirements for large amounts of parallel processing.

[1]  Kam Y. Lau,et al.  Bistability and pulsations in cw semiconductor lasers with a controlled amount of saturable absorption , 1981 .

[2]  A. Yariv,et al.  Dynamical switching characteristics of a bistable injection laser , 1982 .

[3]  I. Henning,et al.  A comparison of active and passive optical bistability in semiconductors , 1985, IEEE Journal of Quantum Electronics.

[4]  D. Miller,et al.  Optical bistability due to increasing absorption. , 1984, Optics letters.

[5]  K. Iga,et al.  Lasing characteristics of improved GaInAsP/InP surface emitting injection lasers , 1983 .

[6]  P. W. Smith,et al.  Solid state: Bistable optical devices promise subpicosecond switching: Extensive research in materials and phenomena could lead to their ultimate use in optical communications, despite high power dissipation , 1981, IEEE Spectrum.

[7]  Nasser N Peyghambarian,et al.  Use of a diode laser to observe room‐temperature, low‐power optical bistability in a GaAs‐AlGaAs etalon , 1984 .

[8]  A. Yariv,et al.  Bistability and negative resistance in semiconductor lasers , 1982 .

[9]  Tetsuya Nakai,et al.  Optical Bistability in a Semiconductor Laser Amplifier , 1983 .

[10]  T. Lee,et al.  Repetitively Q -switched light pulses from GaAs injection lasers with tandem double-section stripe geometry , 1970 .

[11]  A. Gossard,et al.  Fast nonlinear optical response from proton‐bombarded multiple quantum well structures , 1985 .

[12]  J. Liu,et al.  Direct polarization switching in semiconductor lasers , 1984 .

[13]  Filaments as optical waveguides in gallium-arsenide lasers , 1972 .

[14]  Kam Y. Lau,et al.  Bistability and pulsations in semiconductor lasers with inhomogeneous current injection , 1982 .

[15]  N. Dutta,et al.  Polarization characteristics of distributed feedback semiconductor lasers , 1985 .

[16]  Y. Odagiri,et al.  Bistable laser-diode memory for optical time-division switching applications , 1984 .

[17]  Elsa Garmire,et al.  Optical bistability at the band gap in InAs , 1984 .

[18]  G. Thompson,et al.  A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier density , 1972 .

[19]  R. Dupuis,et al.  Mode‐locked picosecond pulse generation from high power phase‐locked GaAs laser arrays , 1984 .

[20]  Hitoshi Kawaguchi,et al.  Optical bistable-switching operation in semiconductor lasers with inhomogeneous excitation , 1982 .

[21]  D. Miller,et al.  Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures , 1982 .

[22]  Hitoshi Kawaguchi,et al.  Bistable operation in semiconductor lasers with inhomogeneous excitation , 1981 .

[23]  M. Dagenais,et al.  Cavityless optical bistability due to light‐induced absorption in cadmium sulfide , 1984 .

[24]  H. Kawaguchi,et al.  Optical input and output characteristics for bistable semiconductor lasers , 1982 .

[25]  Tetsuya Nakai,et al.  Asymmetric Frequency Response of Semiconductor Laser Amplifiers , 1982 .

[26]  H. M. Gibbs,et al.  Differential Gain and Bistability Using a Sodium-Filled Fabry-Perot Interferometer , 1976 .

[27]  Y. Weissman.  Optimization of a multistage thermoelectric refrigerator using the asymptotic temperature distribution , 1979 .

[28]  W. A. Stallard,et al.  Bistability and slow oscillation in an external cavity semiconductor laser , 1983 .

[29]  R. Lang,et al.  External optical feedback effects on semiconductor injection laser properties , 1980 .

[30]  Peter W. H. Smith,et al.  Bistable optical devices promise subpicosecond switching , 1981 .

[31]  D. C. Craft,et al.  Anomalous polarization characteristics of 1.3‐μm InGaAsP buried heterostructure lasers , 1984 .

[32]  Y. Yoshikuni,et al.  Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structures , 1985 .

[33]  A. Huang,et al.  Architectural considerations involved in the design of an optical digital computer , 1984, Proceedings of the IEEE.

[34]  Transient and stationary properties in bistable operation of a GaAs laser coupled to an external resonator , 1983 .

[35]  C. Fonstad,et al.  Double‐heterojunction laser diodes with multiply segmented contacts , 1981 .

[36]  Kenichi Iga,et al.  Two-dimensional array of GaInAsP/InP surface-emitting lasers , 1985 .

[37]  G. Lasher,et al.  Analysis of a proposed bistable injection laser , 1964 .

[38]  David A. B. Miller,et al.  Optical bistability and signal amplification in a semiconductor crystal: applications of new low‐power nonlinear effects in InSb , 1979 .

[39]  Mario Dagenais,et al.  Room‐temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devices , 1985 .

[40]  I. White,et al.  Room-temperature optically triggered bistability in twin-stripe lasers , 1983 .

[41]  C. Burrus,et al.  Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device , 1984 .

[42]  Nasser N Peyghambarian,et al.  Microsecond room-temperature optical bistability and crosstalk studies in ZnS and ZnSe interference filters with visible light and milliwatt powers , 1984 .

[43]  B. Hönerlage,et al.  Optical bistability in CuCl , 1984, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences.

[44]  Donald R. Scifres,et al.  Beam scanning with twin‐stripe injection lasers , 1978 .

[45]  K. Shore.  Optically induced spatial instability in twin-stripe-geometry lasers , 1982 .

[46]  K. Shore.  Semiconductor laser bistable operation with an adjustable trigger , 1982 .

[47]  N. Abraham.  A new focus on laser instabilities and chaos , 1983 .

[48]  U. Koren,et al.  Short cavity InGaAsP/InP lasers with dielectric mirrors , 1983 .

[49]  Observation of bistable optical effects in a twin GaAs/GaAlAs diode external cavity ring laser , 1984 .

[50]  N. G. Basov.  0-1-Dynamics of Injection Lasers , 1968 .

[51]  R. Olshansky,et al.  The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasers , 1983 .

[52]  W. Wiegmann,et al.  High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure , 1983, 1983 International Electron Devices Meeting.

[53]  Resonance phenomena on bias current dependence of AlGaAs double heterostructure laser amplifier , 1982 .

[54]  Ajoy K. Kar,et al.  Optical bistability in InSb at room temperature with two‐photon excitation , 1983 .

[55]  C. Henry,et al.  Stabilization of single frequency operation of coupled-cavity lasers , 1984 .

[56]  J. Liu,et al.  Polarization bistability in semiconductor lasers , 1985 .

[57]  J. Liu,et al.  Temperature-dependent polarization behavior of semiconductor lasers , 1984 .

[58]  Michael J. Adams,et al.  Time dependent analysis of active and passive optical bistability in semiconductors , 1985 .

[59]  Optical bistability in coupled‐cavity semiconductor lasers , 1984 .

[60]  John C. Marinace,et al.  GaAs Injection Laser with Novel Mode Control and Switching Properties , 1965 .

[61]  D. Miller,et al.  Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells , 1985 .

[62]  Brian S. Wherrett,et al.  Absorption switching and bistability in InSb , 1984 .

[63]  T. Rozzi,et al.  Transverse mode oscillations at GHz frequencies in stripe-geometry lasers , 1982 .

[64]  Hitoshi Kawaguchi,et al.  Bistable operation of semiconductor lasers by optical injection , 1981 .

[65]  Niloy K. Dutta,et al.  Bistability in coupled cavity semiconductor lasers , 1984 .

[66]  T. Rozzi,et al.  Near-field control in multistripe geometry injection lasers , 1981 .

[67]  D. Bradley,et al.  Bistability and instability in the output of a twin GaAs/GaAlAs diode external cavity ring laser , 1985 .

[68]  J. Goldhar,et al.  BISTABLE OPTICAL ELEMENT AND ITS APPLICATIONS , 1969 .

[69]  D. Miller,et al.  Optical bistability and differential gain resulting from absorption increasing with excitation , 1984 .

[70]  M. Dagenais,et al.  Picojoule, subnanosecond, all‐optical switching using bound excitons in CdS , 1985 .

[71]  N. Basov,et al.  Dynamics of injection lasers , 1968 .

[72]  D. Miller,et al.  Optical bistability in semiconductors , 1981 .

[73]  Kenju Otsuka,et al.  Optical bistability and nonlinear resonance in a resonant-type semiconductor laser amplifier , 1983 .

[74]  N. A. Olsson,et al.  Spectral bistability in coupled cavity semiconductor lasers , 1984 .

[75]  Hyatt M. Gibbs,et al.  Optical bistability in semiconductors , 1979 .

[76]  K. Iga,et al.  GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflector , 1985 .

[77]  Tuning characteristics of optical amplification in 1.5 μm InGaAsP/InP lasers , 1983 .

[78]  I. White,et al.  Optical bistability in twin-stripe lasers , 1984 .

[79]  W. Wiegmann,et al.  Room‐temperature excitonic optical bistability in a GaAs‐GaAlAs superlattice étalon , 1982 .

[80]  Ian H. White,et al.  New mechanism for bistable operation of closely coupled twin stripe lasers , 1983 .

[81]  Bistable operation and spectral tuning of injection laser with external dispersive cavity , 1982 .

[82]  R. Müller,et al.  Bistable operation of a GaAs-AlGaAs diode laser coupled to an external resonator of narrow spectral bandwidth , 1982 .

[83]  Nasser N Peyghambarian,et al.  Semiconductor nonlinear etalons , 1984, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences.