Memristive Behavior in Electrohydrodynamic Atomized Layers of Poly[2-methoxy-5-(2'-ethylhexyloxy)–(p-phenylenevinylene)] for Next Generation Printed Electronics

Poly[2-methoxy-5-(2'-ethylhexyloxy)–(p-phenylenevinylene)] (MEH:PPV) based organic memristor (memory resistor) has been fabricated on the indium–tin oxide (ITO) coated poly(ethylene terepthalate) (PET) substrate by the electrohydrodynamic atomization (EHDA) technique. Thin jet containing MEH:PPV polymer was generated through a capillary under electrical stresses. The jet was broken into small droplets by adjusting the distance from nozzle to substrate and collected over the substrate under normal room conditions, consequently a high quality layer of MEH:PPV was achieved with an average thickness of 168 nm. The layer was morphologically characterized by a field emission scanning electron microscope (FESEM) analysis. X-ray photoelectron spectroscope (XPS) analysis was also carried out to confirm the chemistry of the deposited material. Electrically, ITO/MEH:PPV/Ag fabricated memristor was found to be switchable between high state and low state between ±4 V. The research work provides the memristive behavior in electrohydrodynamic atomized layers of MEH:PPV to be used for the next generation printed electronics application.

[1]  L. Chua.  Memristor-The missing circuit element , 1971 .

[2]  George G. Malliaras,et al.  Electrical characteristics and efficiency of single-layer organic light-emitting diodes , 1998 .

[3]  Stoddart,et al.  Electronically configurable molecular-based logic gates , 1999, Science.

[4]  M. Reed,et al.  Molecular random access memory cell , 2001 .

[5]  R E Thurstans,et al.  The electroformed metal-insulator-metal structure: a comprehensive model , 2002 .

[6]  K. S. Narayan,et al.  Photogenerated charge carrier transport in p-polymer n-polymer bilayer structures , 2003 .

[7]  Paul R. Berger,et al.  Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic , 2005 .

[8]  Resistive Switching Mechanisms ofV-Doped$hboxSrZrO_3$Memory Films , 2006, IEEE Electron Device Letters.

[9]  B. McCarthy,et al.  Multilevel conductance switching in polymer films , 2006 .

[10]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[11]  R. Janssen,et al.  Electronic memory effects in diodes of zinc oxide nanoparticles in a matrix of polystyrene or poly(3-hexylthiophene) , 2007 .

[12]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[13]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[14]  Koon Gee Neoh,et al.  Polymer electronic memories: Materials, devices and mechanisms , 2008 .

[15]  L. Liz‐Marzán,et al.  Fabrication of nano-structured gold films by electrohydrodynamic atomisation , 2008 .

[16]  Jung Won Seo,et al.  Transparent resistive random access memory and its characteristics for nonvolatile resistive switching , 2008 .

[17]  Victor Erokhin,et al.  Bio-inspired adaptive networks based on organic memristors , 2010, Nano Commun. Networks.

[18]  Influence of Electrode Position and Electrostatic Forces on the Generation of Meniscus in Dielectric Ink , 2010 .

[19]  Solvent effects on the electrical and optical properties of composite carbon nanotube/MEH-PPV films , 2010 .

[20]  Kyung Hyun Choi,et al.  Electrohydrodynamic Spray Deposition of ZnO Nanoparticles , 2010 .

[21]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[22]  Chun-Hu Cheng,et al.  Low‐Power High‐Performance Non‐Volatile Memory on a Flexible Substrate with Excellent Endurance , 2011, Advanced materials.

[23]  Frederick T. Chen,et al.  Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrOx/TaOx/WOx/W Structure , 2012 .

[24]  Takhee Lee,et al.  Organic resistive nonvolatile memory materials , 2012 .

[25]  M. Awais,et al.  Versatile resistive switching (memristive) behavior in an ITO/ZRO2/AG sandwich fabricated using electrohydrodynamic printing , 2012 .

[26]  Jeongdai Jo,et al.  Structural and optical properties of electrohydrodynamically atomized TiO2 nanostructured thin films , 2012 .

[27]  Kyung Hyun Choi,et al.  Cost-effective fabrication of memristive devices with ZnO thin film using printed electronics technologies , 2012 .

[28]  K. Choi,et al.  Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization , 2012 .

[29]  Kyung Hyun Choi,et al.  Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing , 2012 .

[30]  K. Choi,et al.  Fabrication of high quality zinc-oxide layers through electrohydrodynamic atomization , 2012 .

[31]  K. Choi,et al.  Characterization of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film deposited through electrohydrodynamic atomization technique , 2012 .

[32]  Kyung Hyun Choi,et al.  Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor) , 2013 .