Charge diffusion in the field-free region of charge-coupled devices

The potential well in back-illuminated charge-coupled devices CCDs does not reach all the way to the back surface. Hence, light that is absorbed in the field-free region generates electrons that can diffuse into neighboring pixels and thus decreases the spatial resolution of the sensor. We present data for the charge diffusion from a near point source by measuring the response of a back-illuminated CCD to light emitted from a submicron diameter glass fiber tip. The diffusion of elec- trons into neighboring pixels is analyzed for different wavelengths of light ranging from 430 to 780 nm. To find out how the charge spreading into other pixels depends on the location of the light spot; the fiber tip could be moved with a piezoelectric translation stage. The experimental data are compared to Monte Carlo simulations and an analytical model of electron diffusion in the field-free region. The presented analysis can be used to predict the charge diffusion in other back-illuminated sensors, and the experiment is universally applicable to measure any type of sensors. © 2010 Society of Photo-Optical Instrumentation Engineers. DOI: 10.1117/1.3386514

[1]  Stephen E. Reichenbach,et al.  Characterizing digital image acquisition devices , 1991 .

[2]  James P. Lavine,et al.  Monte Carlo Simulation of the Photoelectron Crosstalk in Silicon Imaging Devices , 1985, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[3]  Eric G. Stevens,et al.  An analytical, aperture, and two-layer carrier diffusion MTF and quantum efficiency model for solid-state image sensors , 1994 .

[4]  D. Robinson,et al.  A method for improving the spatial resolution of frontside-illuminated CCD's , 1981, IEEE Transactions on Electron Devices.

[5]  Zoran Ninkov,et al.  Experimental measurement of the variation in sensitivity within a single pixel of a CCD , 1997, Electronic Imaging.

[6]  I. S. Gradshteyn,et al.  Table of Integrals, Series, and Products , 1976 .

[7]  Zoran Ninkov,et al.  Measurements of the subpixel sensitivity for a backside-illuminated CCD , 2000, Electronic Imaging.

[8]  Michael Levi,et al.  Point-spread function in depleted and partially depleted CCDs , 1999 .

[9]  Joseph Lipka,et al.  A Table of Integrals , 2010 .

[10]  G. R. Hopkinson,et al.  Charge diffusion effects in CCD X-ray detectors: II. Experimental results☆ , 1983 .

[11]  M. Brereton Classical Electrodynamics (2nd edn) , 1976 .

[12]  Donald E. Groom,et al.  Recent progress on CCDs for astronomical imaging , 2000, Astronomical Telescopes and Instrumentation.

[13]  Dave Campbell,et al.  CCD Advances For X-Ray Scientific Measurements In 1985 , 1986, Other Conferences.

[14]  Ralf Widenhorn,et al.  Computation of dark frames in digital imagers , 2007, Electronic Imaging.

[15]  Volker Deckert,et al.  High-quality near-field optical probes by tube etching , 1999 .

[16]  G. R. Hopkinson,et al.  Charge diffusion effects in CCD X-ray detectors. I. Theory. , 1983 .

[17]  M. H. Crowell,et al.  The silicon diode array camera tube , 1969 .