Evaluation of producer's and consumer's risks in scatterometry and scanning electron microscopy metrology for inline critical dimension metrology

Measurement characteristics in scatterometry and critical dimension-scanning electron microscopy CD-SEM for lot acceptance sampling of inline CD metrology were investigated by using a statistical approach with Monte Carlo simulation. By operation characteristics curve analysis, producer's risk and consumer's risk arising from sam- pling were clarified. Single use of scatterometry involves a higher risk, such risk being particularly acute in the case of large intrachip CD varia- tion because it is unable to sufficiently monitor intrachip CD variation including local CD error. Substituting scatterometry for conventional SEM metrology is accompanied with risks, resulting in the increase of unnec- essary cost. The combined use of scatterometry and SEM metrology in which the sampling plan for SEM is controlled by scatterometry is a promising metrology from the viewpoint of the suppression of risks and cost. This is due to the effect that CD errors existing in the distribution tails are efficiently caught. © 2006 Society of Photo-Optical Instrumentation Engi-

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