(InxGa1−x)2O3 Photodetectors Fabricated on Sapphire at Different Temperatures by PLD

The (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> photodetectors were fabricated on the single-crystalline (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic> <sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> films deposited on sapphire substrate by pulsed laser deposition. The structural and optical properties of the epilayers were investigated using high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and transmittance spectra. With decreasing the growth temperature, the indium composition increased and the bandgap decreased from 4.99 eV to 4.89 eV (In<sub>0.05 </sub>Ga<sub>0.95</sub>)<sub>2</sub>O<sub>3</sub> and 4.78 eV (In<sub>0.08</sub>Ga<sub>0.92</sub>)<sub>2</sub>O <sub>3</sub>. Furthermore, the photoelectrical characteristics of (In<italic><sub>x</sub></italic>Ga<sub>1−</sub> <italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> detectors were also studied. The enhanced <inline-formula> <tex-math notation="LaTeX">$I_{{\text{photo}}}$</tex-math></inline-formula>, <inline-formula><tex-math notation="LaTeX"> $I_{{\text{dark}}}$</tex-math></inline-formula>, and responsivity <italic>R</italic> were achieved in the devices with higher In composition, while a larger number of defects were introduced, resulting in the significant persistent photoconductivity.

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