SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition

Epitaxial Si/SiGe quantum well waveguide pin photodiodes are grown using rapid thermal chemical vapour deposition, Devices with area of 10×1000 μm 2 have a measured dark current of less than 10 pA at -5 V bias and an external quantum efficiency of approximately 5% at 1 Gbit/s for incident radiation of wavelength λ=0.96 μm