论文信息 - Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials

Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials

The dynamic transconductance method is generalized for depletion-mode transistors (DMTs) and used to characterize the interface trapping properties and film doping on silicon-on-insulator (SOI) structures. This method is based on an analytical model of the transconductance for static, dynamic, and high-frequency operation in the linear region.<<ETX>>

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