Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer
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B. Tillack | P. Zaumseil | M. Schubert | J. Murota | A. Hesse | Y. Yamamoto
[1] Rudolf Lachner,et al. Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology , 2015, IEEE Electron Device Letters.
[2] J. Kasim,et al. Facet engineering for SiGe/Si stressors in advanced CMOS technology , 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).
[3] P. McIntyre,et al. Oxidation-enhanced interdiffusion in Si1−xGex∕Si1−yGey superlattices , 2007 .
[4] G. D. Smith,et al. Thermal desorption of hydrogen from carbon nanosheets. , 2006, The Journal of chemical physics.
[5] J. Tersoff,et al. Competing relaxation mechanisms in strained layers. , 1994, Physical review letters.
[6] D. Robbins,et al. Evolution of surface morphology and strain during SiGe epitaxy , 1992 .
[7] S. Iyer,et al. Relaxation by the modified Frank–Read mechanism in compositionally uniform thin films , 1992 .
[8] B. Tillack,et al. Heavy carbon atomic-layer doping at Si1 − xGex/Si heterointerface , 2010 .