Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization.
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B. Ooi | D. Anjum | S. Mitra | I. Roqan | T. Ng | M. Conroy | U. Bangert | Kuang-Hui Li | J. Min | Ram Chandra Subedi | K. Moore | I. Ajia | Edgars Stegenburgs | Kalani Moore | Kuang-Hui Li