Understanding the changes in mechanical properties due to the crystalline-to-amorphization transition in SiC

Atomic-scale simulations of tensile testing are performed on a series of silicon carbide (SiC) with varying chemical disorder to investigate the changes in mechanical properties due to the accumulation of irradiation damage. The accumulation of chemical disorder, which drives the crystalline-to-amorphization (c-a) transition, plays a significant role on the variations of Young’s modulus and strength, but in different manners. Young’s modulus decreases almost linearly with increasing chemical disorder below some threshold (χ≡NC–C/NC–Si<∼0.54). However, strength exhibits abrupt substantial reduction with the presence of a slight chemical disorder (χ=0.045). Above the threshold, the degradations of Young’s modulus and strength tend to saturate, indicating the completion of c-a transition. The variations of the mechanical properties as a function of chemical disorder are closely correlated with the crossover from homogenous elastic deformation to localized plastic flow percolating through the system. The cros...

[1]  W. J. Weber,et al.  Atomistic simulations of the mechanical properties of silicon carbide nanowires , 2008 .

[2]  W. Weber,et al.  Temperature and dose dependence of ion-beam-induced amorphization in α-SiC , 1997 .

[3]  Hui-ji Shi,et al.  Effects of quench rates on the short- and medium-range orders of amorphous silicon carbide: A molecular-dynamics study , 2008 .

[4]  P. Turchi,et al.  Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si , 2007 .

[5]  Cheng Zhang,et al.  Dynamics of wing cracks and nanoscale damage in glass. , 2005, Physical review letters.

[6]  Steven J. Zinkle,et al.  Amorphization of SiC under ion and neutron irradiation , 1998 .

[7]  Tang,et al.  Atomistic simulation of thermomechanical properties of beta -SiC. , 1995, Physical review. B, Condensed matter.

[8]  Strain localization and percolation of stable structure in amorphous solids. , 2005, Physical review letters.

[9]  Gerhard Hobler,et al.  Monte Carlo Simulations of Defect Recovery within a 10 keV Collision Cascade in 3C-SiC , 2007 .

[10]  Priya Vashishta,et al.  Interaction of voids and nanoductility in silica glass. , 2007, Physical review letters.

[11]  W. Weber,et al.  Structure and properties of ion-beam-modified (6H) silicon carbide , 1998 .

[12]  M. Engelhard,et al.  Behavior of Si and C atoms in ion amorphized SiC , 2007 .

[13]  F Célarié,et al.  Glass breaks like metal, but at the nanometer scale. , 2003, Physical review letters.

[14]  Rajiv K. Kalia,et al.  ATOMISTIC ASPECTS OF CRACK PROPAGATION IN BRITTLE MATERIALS: Multimillion Atom Molecular Dynamics Simulations , 2002 .

[15]  L. Colombo,et al.  Atomic scale origin of crack resistance in brittle fracture. , 2005, Physical review letters.

[16]  Akira Kohyama,et al.  Current status and critical issues for development of SiC composites for fusion applications , 2007 .

[17]  Syo Matsumura,et al.  Structural relaxation of amorphous silicon carbide. , 2002, Physical review letters.

[18]  M. Zvanut,et al.  Measurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance , 2008 .

[19]  M. Sauzay,et al.  Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties , 2009 .

[20]  Fei Gao,et al.  Mechanical properties and elastic constants due to damage accumulation and amorphization in SiC , 2004 .

[21]  Akihiko Hirata,et al.  Direct observations of thermally induced structural changes in amorphous silicon carbide , 2008 .

[22]  J. M. Perlado,et al.  Molecular dynamics simulation of irradiation-induced amorphization of cubic silicon carbide , 2001 .

[23]  C. Esther Jesurum,et al.  Topological modeling of amorphized tetrahedral ceramic network structures , 1998 .

[24]  Yifei Mo,et al.  Simultaneous enhancement of toughness, ductility, and strength of nanocrystalline ceramics at high strain-rates , 2007 .

[25]  Inspec,et al.  Properties of silicon carbide , 1995 .

[26]  Bertoni,et al.  Microscopic struture of amorphous covalent alloys probed by ab initio molecular dynamics: SiC. , 1992, Physical review letters.

[27]  W. Bolse Amorphization and recrystallization of covalent tetrahedral networks , 1999 .

[28]  X. Zu,et al.  Simulation on the effects of torsion strain on the mechanical properties of SiC nanowires under tensile and compressive loading , 2008 .

[29]  S. Zinkle,et al.  Measurement of the effect of radiation damage to ceramic composite interfacial strength , 1992 .

[30]  W. Weber,et al.  Atomistic modeling of amorphous silicon carbide using a bond-order potential , 2007 .

[31]  W. Wang,et al.  Fracture of brittle metallic glasses: brittleness or plasticity. , 2005, Physical review letters.

[32]  M. Ishimaru Electron-beam radial distribution analysis of irradiation-induced amorphous SiC , 2006 .

[33]  D. Srivastava,et al.  Silicon carbide nanowires under external loads: An atomistic simulation study , 2006 .

[34]  Tersoff Chemical order in amorphous silicon carbide. , 1994, Physical review. B, Condensed matter.

[35]  L. Hobbs,et al.  Modeling chemical and topological disorder in irradiation-amorphized silicon carbide , 2002 .