Far‐Infrared Active Media Based on Shallow Impurity State Transitions in Silicon

Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping have been proposed and analyzed, using a procedure allowing to reduce the number of required matrix elements of transitions. The first mechanism is based on the resonance interaction of the 2p0 state in Si : Bi with optical phonons. The other one is based on the suppression of acous- tic-phonon-assisted relaxation from the 2p0 state in Si : P due to the momentum conservation law. Spontaneous emission was registered from shallow donors in Si : P under photoionization by a CO2 laser. The dependence of the spontaneous emission intensity on the intensity of pumping radiation confirms the possibility of amplification on impurity transitions. Introduction. The interest in far-infrared (FIR) active media based on shallow impu- rity states in silicon is caused by two reasons. The first one is the low level of lattice absorption of FIR radiation in silicon. The second is the cascade character of the main relaxation processes along the excited coulombic impurity states (1), allowing to expect high efficiency of pumping of impurity excited states population, which is important for reaching continuous lasing. Cascade relaxation means that transitions with a small re- duction of carrier energy are predominating, and the probability that a heated carrier takes part in the amplification is rather high when one of the first excited states or the group of excited states within the step of phonon relaxation are inversely populated. On the other hand, the fast acoustical-phonon-assisted relaxation causes the main complication in obtaining the inverse population of impurity states, since it tends to form the equilibrium distribution at lattice temperature. Thus, the inverse population of impurity states implies conditions in which the distribution is formed by processes with threshold character (interaction with optical phonons, optical pumping) and being faster than acoustical-phonon-assisted and Auger processes, or it implies conditions, where the latter are suppressed for particular states. The other complication originates from the fact that absorption for impurity transitions lies in the same frequency region as possi- ble amplification and thus can prevent it. Hence the possibility of amplification depends on the details of nonequilibrium distribution of charge carriers over excited impurity states.