CMOS photodiode with enhanced responsivity for the UV/blue spectral range

A new photodiode for the UV/blue spectral range, which can be integrated monolithically with CMOS circuits, is presented. Such optoelectronic integrated circuits (OEICs) with a high sensitivity in the UV/blue spectral range are needed in near-future optical storage systems like digital versatile disk (DVD) or digital video recording (DVR). At 400 nm, our so-called finger photodiode achieves a responsivity of 0.23 A/W corresponding to a quantum efficiency /spl eta/ of 70% [with an antireflection coating (ARC)] and rise and fall times of 1.0 ns and 1.1 ns, respectively. The finger photodiode can be used in the red spectral range, too. At 638 nm, the responsivity is 0.49 A/W (/spl eta/=95%) and rise and fall times of less than 2.3 ns are achieved. For the integration of the finger photodiode in an industrial 1 /spl mu/m twin-well CMOS process, only one additional mask is needed in order to block out the threshold voltage implantation in the photo-active region.

[1]  S. Brueck,et al.  A simple high-speed Si Schottky photodiode , 1991, IEEE Photonics Technology Letters.

[2]  L. Eastman,et al.  Optimization of high-speed metal-semiconductor-metal photodetectors , 1994, IEEE Photonics Technology Letters.

[4]  Radivoje Popovic,et al.  Ultraviolet avalanche photodiode in CMOS technology , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[5]  R. Popovic,et al.  A silicon blue/UV selective stripe-shaped photodiode , 1999 .

[6]  Thomas Y. Hsiang,et al.  Comparison of the picosecond characteristics of silicon and silicon‐on‐sapphire metal‐semiconductor‐metal photodiodes , 1994 .

[7]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[8]  Alexandre Pauchard Silicon sensor microsystem for ultraviolet detection , 2000 .

[9]  C.S. Yin The p-i-n junction-surface depletion-layer photodiode , 1991, IEEE Electron Device Letters.

[10]  Horst Zimmermann,et al.  DVD OEIC and 1 Gbit/s fiber receiver in CMOS technology , 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

[11]  Ch. Buchal,et al.  Silicon-Based Metal-Semiconductor-Metal Detectors , 1998 .

[12]  J.-P. Colinge p-i-n photodiodes made in laser-recrystallized silicon-on-insulator , 1986, IEEE Transactions on Electron Devices.

[13]  Horst Zimmermann,et al.  Advanced photo integrated circuits in CMOS technology , 1999, 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).

[14]  Radivoje Popovic,et al.  Dead space effect on the wavelength dependence of gain and noise in avalanche photodiodes , 2000 .