Growth and characterization of 100 mm diameter CdZnTe single crystals by the vertical gradient freezing method

Abstract Recent bulk crystal growth of CdTe and Cd1 − xZnxTe is reviewed from the viewpoint of large diameter single crystal growth. A VGF method based on a multiple-zone furnace has been developed to grow 〈111〉-oriented 100 mm diameter single crystals. By this method, 〈111〉-oriented Cd1 − xZnxTe single crystals can be reproducibly grown. The grown crystals were characterized by the etch pit density measurement, X-ray diffractometry, GD-MS, photoluminescence, Hall measurement and precipitate observation. The growth mechanism is discussed on the basis of the transient solidification.

[1]  Peter W. Norton,et al.  Vertical Bridgman growth of large-diameter (Cd,Zn)Te crystals , 1994, Defense, Security, and Sensing.

[2]  W. Palosz,et al.  Physical vapor transport of cadmium telluride in closed ampoules , 1993 .

[3]  N. Giles,et al.  Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman Technique , 1986 .

[4]  R. Bell,et al.  Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectors , 1970 .

[5]  W. E. Tennant,et al.  Liquid phase epitaxial growth of large area Hg1−xCdxTe epitaxial layers , 1984 .

[6]  O. Oda,et al.  Characterization of 100 mm diameter CdZnTe single crystals grown by the vertical gradient freezing method , 1995 .

[7]  N. R. Kyle.  Growth of Semi‐Insulating Cadmium Telluride , 1971 .

[8]  Jacek A. Majewski,et al.  A novel method of crystal growth by physical vapour transport and its application to CdTe , 1992 .

[9]  Michael Dudley,et al.  Vertical bridgman growth and characterization of large-diameter single-crystal CdTe , 1993 .

[10]  M. Roth,et al.  Crystalline perfection of melt-grown CdTe , 1990 .

[11]  H. Sasaki,et al.  Density measurement of molten silicon by an improved Archimedian method , 1994 .

[12]  M. Ohmori,et al.  High quality CdTe and its application to radiation detectors , 1993 .

[13]  Robert Triboulet,et al.  Cdte and CdZnTe crystal growth by horizontal bridgman technique , 1990 .

[14]  W. J. Choyke,et al.  A photoluminescence comparison of CdTe thin films grown by molecular‐beam epitaxy, metalorganic chemical vapor deposition, and sputtering in ultrahigh vacuum , 1988 .

[15]  M. Laasch,et al.  The correlation between superheating and supercooling in CdTe melts during unseeded bridgman growth , 1993 .

[16]  S. Takeuchi,et al.  Observation of dislocations in cadmium telluride by cathodoluminescence microscopy , 1979 .

[17]  R. Thomas,et al.  Meeting device needs through melt growth of large-diameter elemental and compound semiconductors , 1990 .

[18]  S. Sen,et al.  Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process☆ , 1988 .

[19]  B. W. Swanson,et al.  Czochralski growth of CdTe and CdMnTe from liquid encapsulated melts , 1987 .

[20]  R. Triboulet,et al.  CdTe growth by ``multipass thm'' and ``sublimation thm'' , 1981 .