论文信息 - A monolithic integration of Ge photodiodes with Si variable optical attenuators

A monolithic integration of Ge photodiodes with Si variable optical attenuators

Ge p-i-n photodiodes integrated with Si variable optical attenuators exhibit low dark current of 60 nA and high responsivity of 0.85 A/W at −1 V. These Ge photodiodes have potential for monolithic integration with other Si photonic components.

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