论文信息 - Impact of Thin La2O3 Insertion for HfO2 MOSFET

Impact of Thin La2O3 Insertion for HfO2 MOSFET

The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O3 insertion for HfO2 MOSFET.

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