MOVPE growth of tunable DBR laser diode emitting at 1060 nm

Abstract Tunable laser diodes emitting at 1060 nm have been grown by metalorganic vapor-phase epitaxy (MOVPE). For the growth of the highly strained InGaAs/GaAs quantum well (QW) high growth rates are found favorable to suppress defect formation. Laser diodes using such QWs in GaAs waveguide and AlGaAs cladding layers show very low threshold ( j th =104 mA) and transparency current densities ( j T =53 A cm −2 ). These low values are preserved when the growth is interrupted after the upper GaAs waveguide and a grating is processed. Three sectional laser diodes having a distributed Bragg reflector grating section, a phase shift and a gain section have a very small linewidth of 0.85 MHz at 30 mW and a tuning range of 300 GHz.