Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET

This work presents the development of a general model translation approach, which aims at modeling and simulation of power MOSFET devices. We use a sub-circuit based on the industry standard CMOS model BSIM3 to represent the performance of power MOSFETs. According to the analysis and comparison between logic CMOS and power transistors, some of the conventional CMOS parameters are deactivated to simplify the device characterization. Meanwhile, some special extensional settings are developed and some parameters are utilized in another method to describe the specific structure of power devices. As a basis for extended BSIM3 parameter extraction the transistor characteristics are obtained from the circuit simulation of original vendor models, i.e. measurements are replaced by flexible simulations and “black box” vendor models are translated to standard BSIM3. Extraction of the BSIM3 parameters is shown for the DC-IV forward and reverse characteristics and the modeling improvement strategy is given for the case of IV characteristics.