Device quality Hg1−xCdxTe material by low-temperature precracking metalorganic chemical vapor deposition

We report properties of device quality Hg1−xCdxTe grown by a precracking metalorganic chemical vapor deposition technique. The refinement of the low‐temperature growth process and a higher purity metalorganic mercury source enable us to obtain material which has a carrier concentration of 2×1015 cm−3 and mobility as high as 330 000 cm2/V s. Infrared transmission spectra and the photoluminescence measurements obtained from this material will be presented. With further development in the synthetic route of the metalorganic mercury source, further improvement in the purity of the Hg1−xCdxTe is possible.