Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures
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V. A. Kurbatov | F. Schäffler | N. Sobolev | J. Leitão | V. Tsvetkov | M. Carmo | H. Lichtenberger | M. Rzaev | T. Burbaev | V. Kurbatov | A. Pogosov | N. N. Sibel’din