论文信息 - Obtaining solid solutions of InGaAsPInGaAsP solid solutions in the spinoidal decomposition region

Obtaining solid solutions of InGaAsPInGaAsP solid solutions in the spinoidal decomposition region

Technology for growing layers of InGaAsP solid solutions with Eg ∼⃒ 1.0 - 1.2eV on InP substrates in the spinodal decomposition region by the metalorganic vapour phase epitaxy (MOVPE) technique has been developed. Results of investigation of the obtained solid solution layers by the methods of photoluminescence, reflectance anisotropy spectroscopy and fractal analysis are presented.

G. S. Gagis | A. B. Gordeeva | R. Levin | A. Marichev

[1] M. N. Mizerov,et al. Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures , 2015 .

[2] William S. C. Chang,et al. Principles of Lasers and Optics , 2005 .

[3] V. Shchukin,et al. Spontaneously assembling periodic composition-modulated InGaAsP structures , 1999 .

[4] O. Acher,et al. First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic vapor deposition , 1987 .

[5] Kentaro Onabe,et al. Calculation of Miscibility Gap in Quaternary InGaPAs with Strictly Regular Solution Approximation , 1982 .

[6] V. Shchukin,et al. Formation of periodic modulated-composition structures by coherent separation of phases in quaternary solid solutions of III-V semiconductors , 1993 .

[7] O. Acher,et al. MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates , 1988 .

[8] B. Perrin. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow , 1982 .